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|Title:||Influence Of The Qd Luminescence Quantum Yield On Photocurrent In Qd/graphene Hybrid Structures|
|Abstract:||Photoinduced changes in luminescent and photoelectrical properties of the hybrid structure based on CdSe/ZnS QDs and multilayer graphene nanobelts were studied. It was shown that an irradiation of the structures by 365 nm mercury line in doses up to 23 J led to growth of QD luminescent quantum yield and photocurrent in the QD/graphene structures. This confirms the proximity of the rates of the QD luminescence decay and energy/charge transfer from QDs to graphene, and opens an opportunity to photoinduced control of the photoelectric response of the graphene based hybrid structures with semiconductor quantum dots.|
Qd/graphene Hybrid Structures
Qd Luminescent Quantum Yield
|Editor:||SPIE-INT SOC OPTICAL ENGINEERING|
|Citation:||Nanophotonics Vi. SPIE-INT SOC OPTICAL ENGINEERING, n. 9884, p. .|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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