Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/319549
Type: Artigo de periódico
Title: Hole Spin Injection From A Gamnas Layer Into Gaas-alas-ingaas Resonant Tunneling Diodes
Abstract: We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. © 2016 IOP Publishing Ltd.
Editor: Institute of Physics Publishing
Rights: fechado
Identifier DOI: 10.1088/0022-3727/49/16/165104
Address: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963606999&partnerID=40&md5=1550889d1cdcf9eccbe629d515107ff9
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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