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|Type:||Artigo de periódico|
|Title:||Hole Spin Injection From A Gamnas Layer Into Gaas-alas-ingaas Resonant Tunneling Diodes|
|Abstract:||We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices. © 2016 IOP Publishing Ltd.|
|Editor:||Institute of Physics Publishing|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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