Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/261260
Type: TESE
Title: Processo de fabricação de HBT em camadas de InGaP/GaAs
Author: Yoshioka, Ricardo Toshinori
Advisor: Swart, Jacobus Willibrordus, 1950-
Subject: Transistores bipolares
Epitaxia por feixe molecular
Crescimento
Carbono
Berilio
Language: Português
Editor: [s.n.]
Date Issue: 2001
Appears in Collections:FEEC - Tese e Dissertação

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