Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25724
Type: Artigo de periódico
Title: Correlated electron-hole transitions in bulk GaAs and GaAs-(Ga,Al)As quantum wells: effects of applied electric and in-plane magnetic fields
Author: Duque, C. A.
Oliveira, L. E.
Dios-Leyva, M. de
Abstract: The effects of crossed electric and magnetic fields on the electronic and exciton properties in semiconductor heterostructures have been investigated within the effective-mass and parabolic band approximations for both bulk GaAs and GaAs-Ga1-xAl xAs quantum wells. The combined effects on the heterostructure properties of the applied crossed electric/magnetic fields together with the direct coupling between the exciton center of mass and internal exciton motions may be dealt with via a simple parameter representing the distance between the electron and hole magnetic parabolas. Calculations lead to the expected behavior for the exciton dispersion in a wide range of the crossed electric/magnetic fields, and present theoretical results are found in good agreement with available experimental measurements.
Subject: Quantum well
Magnetic field
Electric field
Exciton transitions
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332006000600064
Address: http://dx.doi.org/10.1590/S0103-97332006000600064
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600064
Date Issue: 1-Sep-2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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