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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleEffects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wellspt_BR
dc.contributor.authorReyes-Gómez, E.pt_BR
dc.contributor.authorPerdomo Leiva, C. A.pt_BR
dc.contributor.authorOliveira, L. E.pt_BR
dc.contributor.authorDios-Leyva, M. dept_BR
unicamp.authorReyes-Gómez, E.pt_BR
unicamp.authorPerdomo Leiva, C. A.pt_BR
unicamp.authorOliveira, L. E. Universidade Estatual de Campinas Instituto de Físicapt_BR
unicamp.authorDios-Leyva, M. dept_BR
dc.subjectMagnetic fieldspt_BR
dc.subjectQuantum wellspt_BR
dc.subjectg-factorpt_BR
dc.subjectCyclotron effective masspt_BR
dc.description.abstractThe dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g^-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g^-factor theoretically evaluated is found in good agrement with available experimental measurements.en
dc.relation.ispartofBrazilian Journal of Physicspt_BR
dc.publisherSociedade Brasileira de Físicapt_BR
dc.date.issued2006-09-01pt_BR
dc.identifier.citationBrazilian Journal of Physics. Sociedade Brasileira de Física, v. 36, n. 3b, p. 858-861, 2006.pt_BR
dc.language.isoenpt_BR
dc.description.firstpage858pt_BR
dc.description.lastpage861pt_BR
dc.rightsabertopt_BR
dc.sourceSciELOpt_BR
dc.identifier.issn0103-9733pt_BR
dc.identifier.idScieloS0103-97332006000600016pt_BR
dc.identifier.doi10.1590/S0103-97332006000600016pt_BR
dc.identifier.urlhttp://dx.doi.org/10.1590/S0103-97332006000600016pt_BR
dc.identifier.urlhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600016pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.date.available2014-07-17T17:28:05Z
dc.date.available2015-11-26T11:42:36Z-
dc.date.accessioned2014-07-17T17:28:05Z
dc.date.accessioned2015-11-26T11:42:36Z-
dc.description.provenanceMade available in DSpace on 2014-07-17T17:28:05Z (GMT). No. of bitstreams: 0 Previous issue date: 2006-09-01en
dc.description.provenanceMade available in DSpace on 2015-11-26T11:42:36Z (GMT). No. of bitstreams: 2 S0103-97332006000600016.pdf: 438248 bytes, checksum: 6bd46ce2c5c625ae046b9c4d6701eb8e (MD5) S0103-97332006000600016.pdf.txt: 19611 bytes, checksum: 7cdb9d282332bdd61bde764d733f8a3d (MD5) Previous issue date: 2006-09-01en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/25723
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/25723-
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