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|Type:||Artigo de periódico|
|Title:||Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells|
Perdomo Leiva, C. A.
Oliveira, L. E.
Dios-Leyva, M. de
|Abstract:||The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g^-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g^-factor theoretically evaluated is found in good agrement with available experimental measurements.|
Cyclotron effective mass
|Editor:||Sociedade Brasileira de Física|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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