Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25723
Type: Artigo de periódico
Title: Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells
Author: Reyes-Gómez, E.
Perdomo Leiva, C. A.
Oliveira, L. E.
Dios-Leyva, M. de
Abstract: The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g^-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g^-factor theoretically evaluated is found in good agrement with available experimental measurements.
Subject: Magnetic fields
Quantum wells
g-factor
Cyclotron effective mass
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332006000600016
Address: http://dx.doi.org/10.1590/S0103-97332006000600016
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600016
Date Issue: 1-Sep-2006
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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