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|Type:||Artigo de periódico|
|Title:||Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields|
|Author:||Dios-Leyva, M. de|
Brandi, H. S.
Oliveira, L. E.
|Abstract:||The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g|
-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g
-factor are found in quite good agreement with experimental data.
Cyclotron effective mass
|Editor:||Sociedade Brasileira de Física|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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