Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25722
Type: Artigo de periódico
Title: Electron g-factor and cyclotron effective mass in semiconductor quantum wells under growth-direction applied magnetic fields
Author: Dios-Leyva, M. de
Porras-Montenegro, N.
Brandi, H. S.
Oliveira, L. E.
Abstract: The Ogg-McCombe effective Hamiltonian for the electron in the conduction band together with the non-parabolic and effective-mass approximations were used in a theoretical study of the cyclotron effective mass and electron effective Landé g
-factor in semiconductor GaAs-Ga1-xAl xAs quantum wells under an applied magnetic field parallel to the growth direction of the quantum well. Calculations are performed as a function of the applied magnetic field, and for different widths of the GaAs-Ga1-xAl xAs quantum wells. Results for the electron cyclotron effective mass and g
-factor are found in quite good agreement with experimental data.
Subject: g-factor
Cyclotron effective mass
Quantum wells
Magnetic field
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332006000600015
Address: http://dx.doi.org/10.1590/S0103-97332006000600015
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600015
Date Issue: 1-Sep-2006
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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