Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25719
Type: Artigo de periódico
Title: SnO2 extended gate field-effect transistor as pH sensor
Author: Batista, P. D.
Mulato, M.
Graeff, C. F. de O.
Fernandez, F. J. R.
Marques, F. das C.
Abstract: Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrode and a MOSFET device, which can be applied to the measurement of ion content in a solution. This structure has a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFET). In this work, we constructed an EGFET by connecting the sensing structure fabricated with SnO2 to a commercial MOSFET (CD4007UB). From the numerical simulation of site binding model it is possible to determine some of the desirable characteristics of the films. We investigate and compare SnO2 films prepared using both the Sol-gel and the Pechini methods. The aim is an amorphous material for the EGFET. The SnO2 powder was obtained at different calcinating temperatures (200 - 500ºC) and they were investigated by X-ray diffraction (XRD), infrared spectroscopy (IR), thermogravimetric analysis (TGA) and differential thermal analysis (DTA). The films were investigated as pH sensors (range 2-11).
Subject: SnO2
pH sensor
Extended gate field-effect transistor
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332006000300066
Address: http://dx.doi.org/10.1590/S0103-97332006000300066
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300066
Date Issue: 1-Jun-2006
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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