Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25693
Type: Artigo de periódico
Title: Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
Author: Martins, M. R.
Oliveira, J. B. B.
Tabata, A.
Laureto, E.
Bettini, J.
Meneses, E. A.
Carvalho, M. M. G.
Abstract: In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van De Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332004000400022
Address: http://dx.doi.org/10.1590/S0103-97332004000400022
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400022
Date Issue: 1-Jun-2004
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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