Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Electron mobility in nitride materials
Author: Rodrigues, Clóves G.
Freire, Valder N.
Vasconcellos, Áurea R.
Luzzi, Roberto
Abstract: We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332002000200056
Date Issue: 1-Jun-2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
S0103-97332002000200056.pdf158.36 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.