Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25668
Type: Artigo de periódico
Title: Pulsed laser crystallization of SiGe alloys on GaAs
Author: Dondeo, F.
Santos, P. V.
Ramsteiner, M.
Comedi, D.
Pudenzi, M. A. A.
Chambouleyron, I.
Abstract: We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial Si xGe1/GaAs structures for Si compositions up to x = 25%. Higher compositions lead to polycrystalline films. This is attributed to the increased lattice mismatch between Si xGe1 and GaAs as the Si fraction in the alloy increases
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332002000200036
Address: http://dx.doi.org/10.1590/S0103-97332002000200036
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200036
Date Issue: 1-Jun-2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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