Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25665
Type: Artigo de periódico
Title: Transport and optical properties of resonant tunneling structures
Author: Vercik, A.
Gobato, Y. Galvão
Mendoza, M.
Schulz, P.A.
Abstract: Transport properties of a GaAs/AlAs superlattice-like double barrier diode are studied in this work as a function of the sample temperature. An activation energy of about 60meV obtained from the Arrhenius plot is in good agreement with the confined level in the central well. Numerical simulations also confirm the importance of bound levels in the gammaand X bands for the resonant tunneling process. The enhancement of photoluminescence as the temperature is increased is also studied. This behavior is associated to the transport properties of holes in the collector contact, which control the supply of minority carriers, which tunnel into the well. The description of the observed results requires the modi-cation of simple known models to take into account the two contributions to the pair generation rate in the well, responsible of the photoluminescence at zero and finite bias.
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332002000200022
Address: http://dx.doi.org/10.1590/S0103-97332002000200022
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200022
Date Issue: 1-Jun-2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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