Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25664
Type: Artigo de periódico
Title: Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Author: Laureto, E.
Meneses, E. A.
Carvalho Jr., W.
Bernussi, A. A.
Ribeiro, E.
Silva, E. C. F. da
Oliveira, J. B. B. de
Abstract: Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97332002000200017
Address: http://dx.doi.org/10.1590/S0103-97332002000200017
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200017
Date Issue: 1-Jun-2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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