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http://repositorio.unicamp.br/jspui/handle/REPOSIP/25642
Type: | Artigo de periódico |
Title: | Environment of Er in a-Si:H: co-sputtering versus ion implantation |
Author: | Piamonteze, Cínthia Tessler, Leandro R. Alves, M. C. Martins Tolentino, H. |
Abstract: | We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood. |
Editor: | Sociedade Brasileira de Física |
Rights: | aberto |
Identifier DOI: | 10.1590/S0103-97331999000400029 |
Address: | http://dx.doi.org/10.1590/S0103-97331999000400029 http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400029 |
Date Issue: | 1-Dec-1999 |
Appears in Collections: | Unicamp - Artigos e Outros Documentos |
Files in This Item:
File | Description | Size | Format | |
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S0103-97331999000400029.pdf | 149.75 kB | Adobe PDF | View/Open |
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