Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/25641
Type: Artigo de periódico
Title: Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
Author: Ribeiro, E.
Jäggi, R.
Heinzel, T.
Ensslin, K.
Medeiros-Ribeiro, G.
Petroff, P. M.
Abstract: We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role.
Editor: Sociedade Brasileira de Física
Rights: aberto
Identifier DOI: 10.1590/S0103-97331999000400026
Address: http://dx.doi.org/10.1590/S0103-97331999000400026
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400026
Date Issue: 1-Dec-1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
S0103-97331999000400026.pdf183.17 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.