Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/244139
Type: Artigo
Title: Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots
Author: Nobrega, J. A. e
Gordo, V. O.
Galeti, H. V. A.
Gobato, Y. G.
Brasil, M. J. S. P.
Taylor, D.
Orlita, M.
Henini, M.
Abstract: In this work, we have investigated transport and optical properties of n-i-n resonant tunneling diodes (RTDs) containing a layer of InAs self-assembled quantum dots (QDs) grown on a (311)B oriented GaAs substrate. Polarization-resolved photoluminescence (PL) and magneto-transport measurements were performed under applied voltage and magnetic fields up to 15 T at 2 K under linearly polarized laser excitation. It was observed that the QD circular polarization degree depends strongly on the applied voltage. Its voltage dependence is explained by the formation of excitonic complexes such as positively (X+) and negatively (X-) charged excitons in the QDs. Our results demonstrate an effective electrical control of an ensemble of InAs QD properties by tuning the applied voltage across a RID device into the resonant tunneling condition.
Subject: Diodos
Fotoluminescência
Spintrônica
Pontos quânticos
Country: Reino Unido
Editor: Academic Press
Citation: Spin Polarization Of Carriers In Resonant Tunneling Devices Containing Inas Self-assembled Quantum Dots. Academic Press Ltd- Elsevier Science Ltd, v. 88, p. 574-581 DEC-2015.
Rights: fechado
Identifier DOI: 10.1016/j.spmi.2015.10.018
Address: https://www.sciencedirect.com/science/article/pii/S0749603615302366
Date Issue: 2015
Appears in Collections:IFGW - Artigos e Outros Documentos

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