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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampVeiga, Larissa Sayuri Ishibept_BR
dc.typeArtigopt_BR
dc.titleSr2Ir1-xRhxO4(x < 0.5): an inhomogeneous j(eff)=1/2 Hubbard systempt_BR
dc.contributor.authorChikara, S.pt_BR
dc.contributor.authorHaskel, D.pt_BR
dc.contributor.authorSim, J.-H.pt_BR
dc.contributor.authorKim, H.-S.pt_BR
dc.contributor.authorChen, C.-C.pt_BR
dc.contributor.authorFabbris, G.pt_BR
dc.contributor.authorVeiga, L. S. I.pt_BR
dc.contributor.authorSouza-Neto, N. M.pt_BR
dc.contributor.authorTerzic, J.pt_BR
dc.contributor.authorButrouna, K.pt_BR
dc.contributor.authorCao, G.pt_BR
dc.contributor.authorHan, M. J.pt_BR
dc.contributor.authorvan Veenendaal, M.pt_BR
dc.subjectHubbard, Modelo de, Acoplamento spin-órbita, Magnetismopt_BR
dc.subject.otherlanguageHubbard model, Spin-orbit coupling, Magnetismpt_BR
dc.description.abstractIn a combined experimental and theoretical study, we investigate the properties of Sr2Ir1-xRhxO4. From the branching ratios of the L-edge isotropic x-ray absorption spectra, we determine that the spin-orbit coupling is remarkably independent of x for both iridium and rhodium sites. DFT + U calculations show that the doping is close to isoelectronic and introduces impurity bands of predominantly rhodium character close to the lower Hubbard band. Overlap of these two bands leads to metallic behavior. Since the low-energy states for x < 0.5 have predominantly j(eff) = 1/2 character, we suggest that the electronic properties of this material can be described by an inhomogeneous Hubbard model, where the on-site energies change due to local variations in the spin-orbit interaction strength combined with additional changes in binding energy.en
dc.description.abstractIn a combined experimental and theoretical study, we investigate the properties of Sr2Ir1-xRhxO4. From the branching ratios of the L-edge isotropic x-ray absorption spectra, we determine that the spin-orbit coupling is remarkably independent of x for both iridium and rhodium sites. DFT + U calculations show that the doping is close to isoelectronic and introduces impurity bands of predominantly rhodium character close to the lower Hubbard band. Overlap of these two bands leads to metallic behavior. Since the low-energy states for x < 0.5 have predominantly j(eff) = 1/2 character, we suggest that the electronic properties of this material can be described by an inhomogeneous Hubbard model, where the on-site energies change due to local variations in the spin-orbit interaction strength combined with additional changes in binding energy.pt_BR
dc.relation.ispartofPhysical review. B, Covering condensed matter and materials physicspt_BR
dc.relation.ispartofabbreviationPhys. rev. Bpt_BR
dc.publisher.cityCollege Park, MDpt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAmerican Physical Societypt_BR
dc.date.issued2015pt_BR
dc.date.monthofcirculationAug.pt_BR
dc.identifier.citationSr2ir1-xrhxo4(x < 0.5): An Inhomogeneous J(eff)=1/2 Hubbard System. Amer Physical Soc, v. 92, p. AUG-2015.pt_BR
dc.language.isoengpt_BR
dc.description.volume92pt_BR
dc.description.issuenumber8pt_BR
dc.description.firstpage1pt_BR
dc.description.lastpage5pt_BR
dc.rightsabertopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn2469-9950pt_BR
dc.identifier.eissn2469-9969pt_BR
dc.identifier.doi10.1103/PhysRevB.92.081114pt_BR
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.081114pt_BR
dc.description.sponsorshipSem informaçãopt_BR
dc.description.sponsorship1Sem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.date.available2016-06-07T13:34:55Z-
dc.date.accessioned2016-06-07T13:34:55Z-
dc.description.provenanceMade available in DSpace on 2016-06-07T13:34:55Z (GMT). No. of bitstreams: 1 wos_000359943400002.pdf: 971136 bytes, checksum: df49dcf0e78adc4835fe5c0197ee3f5a (MD5) Previous issue date: 2015 Bitstreams deleted on 2020-09-02T13:41:18Z: wos_000359943400002.pdf,. Added 1 bitstream(s) on 2020-09-02T13:45:28Z : No. of bitstreams: 1 000359943400002.pdf: 1079260 bytes, checksum: 127e09491804ffd38f85306845fba956 (MD5)en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/244013-
dc.contributor.departmentDepartamento de Eletrônica Quânticapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.identifier.source000359943400002pt_BR
dc.creator.orcid0000-0003-0515-0588pt_BR
dc.type.formArtigopt_BR
dc.identifier.articleid081114pt_BR
dc.description.sponsorNoteWork at Argonne National Laboratory was supported by the US DOE, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. M.v.V. was supported by the US Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DE-FG02-03ER46097 and NIU's Institute for Nanoscience, Engineering, and Technology. The computational work was partially performed at NERSC, which is supported by the US DOE Contract No. DE-AC02-05CH11231. Computational resources were partly supported by the National Institute of Supercomputing and Networking/Korea Institute of Science and Technology Information with supercomputing resources including technical support (Grant No. KSC-2013-C2-23). J.H.S. and M.J.H were supported by Basic Science Research Program through NRF (2014R1A1A2057202) and by Samsung Advanced Institute of Technology (SAIT). H.-S.K. was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No. 2013R1A6A3A01064947). The work at the University of Kentucky was supported by NSF via Grant No. DMR-1265162.pt_BR
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