Please use this identifier to cite or link to this item:
Type: Artigo
Title: Chemical vapor deposition of monolayer rhenium disulfide (ReS2)
Author: Keyshar, K.
Gong, Y.
Ye, G.
Brunetto, G.
Zhou, W.
Cole, D. P.
Hackenberg, K.
He, Y.
Machado, L.
Kabbani, M.
Hart, A. H. C.
Li, B.
Galvão, D. S.
George, A.
Vajtai, R.
Tiwary, C. S.
Ajayan, P. M.
Abstract: The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field‐effect transistor characteristics are evaluated, which highlight the potential in being used as an n‐type semiconductor.
Subject: Materiais bidimensionais
Deposição química de vapor
Dicalcogenetos de metais de transição
Country: Alemanha
Editor: Wiley-VCH Verlag
Citation: Chemical Vapor Deposition Of Monolayer Rhenium Disulfide (res2). Wiley-v C H Verlag Gmbh, v. 27, p. 4640-4648 AUG-2015.
Rights: fechado
Identifier DOI: 10.1002/adma.201501795
Date Issue: 2015
Appears in Collections:IFGW - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
000359911500021.pdf2.23 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.