Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/243284
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampMorales Corredor, Mónicapt_BR
dc.contributor.authorunicampAlvarez, Fernandopt_BR
dc.typeArtigopt_BR
dc.titleIdentification of the chemical bonding prompting adhesion of a-C:H thin films on ferrous alloy intermediated by a SiCx:H buffer layerpt_BR
dc.contributor.authorCemin, F.pt_BR
dc.contributor.authorBim, L. T.pt_BR
dc.contributor.authorLeidens, L. M.pt_BR
dc.contributor.authorMorales, M.pt_BR
dc.contributor.authorBaumvol, I. J. R.pt_BR
dc.contributor.authorAlvarez, F.pt_BR
dc.contributor.authorFigueroa, C. A.pt_BR
dc.subjectEspectroscopia fotoeletrônica de raio Xpt_BR
dc.subjectInterfaces (Ciências físicas)pt_BR
dc.subjectCarboneto de silíciopt_BR
dc.subjectCarbono amorfopt_BR
dc.subjectAdesãopt_BR
dc.subject.otherlanguageX-ray photoelectron spectroscopypt_BR
dc.subject.otherlanguageInterfaces (Physical sciences)pt_BR
dc.subject.otherlanguageSilicon carbidept_BR
dc.subject.otherlanguageAmorphous carbonpt_BR
dc.subject.otherlanguageAdhesionpt_BR
dc.description.abstractAmorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bond's. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS): The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon carbon (C-C) and carbon silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.en
dc.description.abstractAmorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bond's. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS): The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon carbon (C-C) and carbon silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.pt_BR
dc.relation.ispartofACS applied materials and interfacespt_BR
dc.relation.ispartofabbreviationACS appl. mater. interfacespt_BR
dc.publisher.cityWashington, WApt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAmerican Chemical Societypt_BR
dc.date.issued2015pt_BR
dc.date.monthofcirculationJulypt_BR
dc.identifier.citationIdentification Of The Chemical Bonding Prompting Adhesion Of A-c:h Thin Films On Ferrous Alloy Intermediated By A Sicx:h Buffer Layer. Amer Chemical Soc, v. 7, p. 15909-15917 Jul-2015.pt_BR
dc.language.isoengpt_BR
dc.description.volume7pt_BR
dc.description.issuenumber29pt_BR
dc.description.firstpage15909pt_BR
dc.description.lastpage15917pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn1944-8244pt_BR
dc.identifier.eissn1944-8252pt_BR
dc.identifier.doi10.1021/acsami.5b03554pt_BR
dc.identifier.urlhttps://pubs.acs.org/doi/10.1021/acsami.5b03554pt_BR
dc.description.sponsorshipCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorshipCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORpt_BR
dc.description.sponsorshipFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DO RIO GRANDE DO SUL - FAPERGSpt_BR
dc.description.sponsorshipFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorship1CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORpt_BR
dc.description.sponsorship1FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DO RIO GRANDE DO SUL - FAPERGSpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsordocumentnumber554336/2010-3pt_BR
dc.description.sponsordocumentnumber087/11pt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumber2012/10127-5pt_BR
dc.date.available2016-06-07T13:22:56Z-
dc.date.accessioned2016-06-07T13:22:56Z-
dc.description.provenanceMade available in DSpace on 2016-06-07T13:22:56Z (GMT). No. of bitstreams: 1 wos_000358897200026.pdf: 3884239 bytes, checksum: 2f8af2f51f98903746ccc7b14bf6a402 (MD5) Previous issue date: 2015 Bitstreams deleted on 2020-09-02T13:40:11Z: wos_000358897200026.pdf,. Added 1 bitstream(s) on 2020-09-02T13:44:15Z : No. of bitstreams: 1 000358897200026.pdf: 3974923 bytes, checksum: 8480ff74452343884a8e3b7157432345 (MD5)en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/243284-
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.subject.keywordHydrogenated silicon carbidept_BR
dc.subject.keywordHydrogenated amorphous carbonpt_BR
dc.subject.keywordDiamond-like carbonpt_BR
dc.subject.keywordChemical bondingpt_BR
dc.subject.keywordBuffer layerpt_BR
dc.identifier.source000358897200026pt_BR
dc.creator.orcid0000-0003-3564-2794pt_BR
dc.creator.orcid0000-0002-9393-1298pt_BR
dc.type.formArtigopt_BR
dc.description.sponsorNoteThe authors are grateful to UCS, INCT-INES (# 554336/2010-3), CAPES (Brafitec 087/11), PETROBRAS (504062/2014-0), and FAPERGS for financial support. F.C., L.T.B., L.M.L., I.J.R.B., F.A., and C.A.F. are CNPq and CAPES fellows. F.A. is, in part, supported by Fapesp project 2012/10127-5. F.C. is partly supported by PETROBRAS. This work was supported by the SUMA2 Network Project, seventh Framework Program of the European Commission (IRSES Project # 318903). Finally, the authors are grateful to M. E. H. Maia da Costa at PUC-Rio for the Raman spectra.pt_BR
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