The circular polarization inversion in delta < Mn >/InGaAs/GaAs light-emitting diodes

Dorokhin, M. V.; Danilov, Y. A.; Zvonkov, B. N.; Balanta, M. A. G.; Brasil, M. J. S. P.; Iikawa, F.; Mendes, U. C.; Brum, J. A.; Demina, P. B.; Malysheva, E. I.; Zdoroveyshchev, A. V.; Kudrin, A. V.

Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/243173

Type:	Artigo
Title:	The circular polarization inversion in delta < Mn >/InGaAs/GaAs light-emitting diodes
Author:	Dorokhin, M. V. Danilov, Y. A. Zvonkov, B. N. Balanta, M. A. G. Brasil, M. J. S. P. Iikawa, F. Mendes, U. C. Brum, J. A. Demina, P. B. Malysheva, E. I. Zdoroveyshchev, A. V. Kudrin, A. V.
Abstract:	We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta < Mn >-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices. (C) 2015 AIP Publishing LLC. We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta < Mn >-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices.
Subject:	Semicondutores magnéticos, Ferromagnetismo, Manganês
Country:	Estados Unidos
Editor:	AIP Publishing
Citation:	The Circular Polarization Inversion In Delta < Mn >/ingaas/gaas Light-emitting Diodes. Amer Inst Physics, v. 107, p. Jul-2015.
Rights:	aberto
Identifier DOI:	10.1063/1.4927645
Address:	https://aip.scitation.org/doi/10.1063/1.4927645
Date Issue:	2015
Appears in Collections:	IFGW - Artigos e Outros Documentos

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