Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/243173
Type: Artigo
Title: The circular polarization inversion in delta < Mn >/InGaAs/GaAs light-emitting diodes
Author: Dorokhin, M. V.
Danilov, Y. A.
Zvonkov, B. N.
Balanta, M. A. G.
Brasil, M. J. S. P.
Iikawa, F.
Mendes, U. C.
Brum, J. A.
Demina, P. B.
Malysheva, E. I.
Zdoroveyshchev, A. V.
Kudrin, A. V.
Abstract: We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta < Mn >-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices. (C) 2015 AIP Publishing LLC.
We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta < Mn >-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices.
Subject: Semicondutores magnéticos, Ferromagnetismo, Manganês
Country: Estados Unidos
Editor: AIP Publishing
Citation: The Circular Polarization Inversion In Delta < Mn >/ingaas/gaas Light-emitting Diodes. Amer Inst Physics, v. 107, p. Jul-2015.
Rights: aberto
Identifier DOI: 10.1063/1.4927645
Address: https://aip.scitation.org/doi/10.1063/1.4927645
Date Issue: 2015
Appears in Collections:IFGW - Artigos e Outros Documentos

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