Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/243063
Type: Artigo
Title: Localized charge transfer process and surface band bending in methane sensing by GaN nanowires
Author: Patsha, A.
Sahoo, P.
Arnirthapandian, S.
Prasad, A. K.
Das, A.
Tyagi, A. K.
Cotta, M. A.
Dhara, S.
Abstract: The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. For revelation of the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(O-N) and V-Ga-3O(N) defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied by in situ scanning Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the V-Ga-3O(N) defect complex on a nanowire surface, is attributed to controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.
The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. For revelation of the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(O-N) and V-Ga-3O(N) defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied by in situ scanning Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the V-Ga-3O(N) defect complex on a nanowire surface, is attributed to controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.
Subject: Nanofios
Transferência de carga
Nitreto de gálio
Metano
Country: Estados Unidos
Editor: American Chemical Society
Citation: Localized Charge Transfer Process And Surface Band Bending In Methane Sensing By Gan Nanowires. Amer Chemical Soc, v. 119, p. 21251-21260 SEP-2015.
Rights: fechado
Identifier DOI: 10.1021/acs.jpcc.5b06971
Address: https://pubs.acs.org/doi/10.1021/acs.jpcc.5b06971
Date Issue: 2015
Appears in Collections:IFGW - Artigos e Outros Documentos

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