Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/242946
Type: Artigo de periódico
Title: Electro-optical Modeling Of High Power Semiconductor Laser For 800 Nm Emission With An Ingaasp/gaas/ingap Quantum Hetero Structure
Author: Furtado
M. T.; Moschim
E.
Abstract: We present the electrical-optical modeling of a high power semiconductor laser diode for emission at 800 nm wavelength. We describe a thoroughly detailed procedure for modeling the semiconductor laser device with a Separate Confinement Heterostructure (SCH), based on the material alloys of compounds families, InGaAsP/InGaAsP/InGaP on GaAs substrates. The heterostructure active region produces a peak emission at 0.8 nm. The SCH heterostructure comprises a quantum well 100 A thick of ImGal,AsyPi_y (x = 0.14, y = 0.73) alloy. The quantum barriers layers comprise quaternary materials of composition ImGa(x)As(y)P(1-y) (x = 0.39, y = 0.2). The confining layers of the quaternary SCH heterostrucure involve higher gap materials, such as ternary InGaN or quaternary AlGaInP. Band gaps of quaternary materials in the well and confining layers of the SCH heterostructure correspond to wavelengths of 0.8 gm (Eg = 1.55 eV) and 0.69 gm (Eg = 1.8 eV), respectively.
Subject: Continuous-wave Power
Well Lasers
Diode-lasers
Active-region
Gaas
Gain
Band
Temperature
Country: PISCATAWAY
Editor: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Electro-optical Modeling Of High Power Semiconductor Laser For 800 Nm Emission With An Ingaasp/gaas/ingap Quantum Hetero Structure. Ieee-inst Electrical Electronics Engineers Inc, v. 13, p. 2871-2878 SEP-2015.
Rights: fechado
Identifier DOI: 
Address: http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=7350023&punumber=9907
Date Issue: 2015
Appears in Collections:Unicamp - Artigos e Outros Documentos

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