Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/242211
Type: Artigo de periódico
Title: Deposition Of Highly Textured Aln Thin Films By Reactive High Power Impulse Magnetron Sputtering
Author: Moreira
Milena A.; Torndahl
Tobias; Katardjiev
Ilia; Kubart
Tomas
Abstract: Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 degrees C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an x-scan full width at half maximum value of 5.1 degrees was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques. (C) 2015 American Vacuum Society.
Subject: Orientation
Electrodes
Growth
Ain
Temperature
Interlayers
Improvement
Substrate
Stress
Dc
Country: MELVILLE
Editor: A V S AMER INST PHYSICS
Rights: fechado
Identifier DOI: 10.1116/1.4907874
Address: http://scitation.aip.org/content/avs/journal/jvsta/33/2/10.1116/1.4907874
Date Issue: 2015
Appears in Collections:Unicamp - Artigos e Outros Documentos

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