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Type: Artigo de periódico
Title: Probing Individual Quantum Dots: Noise In Self-assembled Systems.
Author: Vicaro, K O
Gutiérrez, H R
Seabra, A C
Schulz, P A
Cotta, M A
Abstract: In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
Subject: Computer Simulation
Computer-aided Design
Data Interpretation, Statistical
Equipment Design
Equipment Failure Analysis
Models, Statistical
Quantum Dots
Reproducibility Of Results
Sensitivity And Specificity
Citation: Journal Of Nanoscience And Nanotechnology. v. 9, n. 11, p. 6390-5, 2009-Nov.
Rights: fechado
Identifier DOI: 
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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