Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107959
Type: Artigo de evento
Title: Transient Analysis Of Thermal Distortion In A Silicon Substrate On Incidence Of A Single Soft X-ray Fel Pulse
Author: De Castro A.R.B.
Vasconcellos A.R.
Luzzi R.
Abstract: We discuss the dynamics of a silicon surface after incidence of a short, high energy pulse in the soft X-ray range. We focus on time-delays long enough after pulse incidence, so that the absorbed energy can be seen as a nonuniform time-dependent heat distribution in the solid. A model is developed using techniques of non-equilibrium hydro-thermodynamics, considering just the longitudinal and transverse acoustic phonon systems in the excited solid. The general theory leads to Maxwell-Cattaneo partial differential equations for the material medium n(r,t) and the energy h(r,t) volume densities; these reduce to the diffusion equation for the temperature T(r,t) and the usual thermo-mechanical elastic equation for the strain u(r,t) on further simplification. Here we solve the Maxwell-Cattaneo equation for T(r,t) and compare to previous results where the diffusion equation was used instead; the Maxwell-Cattaneo equation predicts faster cooling at short (dozens of fs, say) time delays. Previously obtained results for the strain field are briefly recalled. © 2011 SPIE.
Editor: 
Rights: aberto
Identifier DOI: 10.1117/12.887393
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-79960482010&partnerID=40&md5=5608efa0f4a2002ed8280cea60cda043
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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