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|Type:||Artigo de evento|
|Title:||Transient Analysis Of Thermal Distortion In A Silicon Substrate On Incidence Of A Single Soft X-ray Fel Pulse|
|Author:||De Castro A.R.B.|
|Abstract:||We discuss the dynamics of a silicon surface after incidence of a short, high energy pulse in the soft X-ray range. We focus on time-delays long enough after pulse incidence, so that the absorbed energy can be seen as a nonuniform time-dependent heat distribution in the solid. A model is developed using techniques of non-equilibrium hydro-thermodynamics, considering just the longitudinal and transverse acoustic phonon systems in the excited solid. The general theory leads to Maxwell-Cattaneo partial differential equations for the material medium n(r,t) and the energy h(r,t) volume densities; these reduce to the diffusion equation for the temperature T(r,t) and the usual thermo-mechanical elastic equation for the strain u(r,t) on further simplification. Here we solve the Maxwell-Cattaneo equation for T(r,t) and compare to previous results where the diffusion equation was used instead; the Maxwell-Cattaneo equation predicts faster cooling at short (dozens of fs, say) time delays. Previously obtained results for the strain field are briefly recalled. © 2011 SPIE.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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