Please use this identifier to cite or link to this item:
Type: Artigo de evento
Title: E 1 Gap Of Wurtzite Inas Single Nanowires Measured By Means Of Resonant Raman Spectroscopy
Author: Moller M.
Dacal L.C.O.
De Lima Jr. M.M.
Iikawa F.
Chiaramonte T.
Cotta M.A.
Cantarero A.
Abstract: Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase. © 2011 American Institute of Physics.
Rights: aberto
Identifier DOI: 10.1063/1.3666459
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-84855498353.pdf765 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.