Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107737
Type: Artigo de evento
Title: Analysis Of Focused Ion Beam Damages In Optoelectronic Devices Fabrication
Author: Vallini F.
Barea L.A.M.
Dos Reis E.F.
Von Zuben A.A.
Frateschi N.C.
Abstract: A study of the damages caused by gallium focused ion beam (FIB) is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compound milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and the formation of metallic clusters. Microdisks resonators are fabricated using FIB milling of different emission currents. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.3615206
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84856918495&partnerID=40&md5=0b163ab9dd050b79a75bb9bd49b9dbe4
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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