Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107736
Type: Artigo de evento
Title: Platinum To Kill Lifetime In Power Diode Design
Author: Rojas-Hernandez A.
Swart J.
Marzano W.
Garcia-Juarez A.
Abstract: An ultrafast power diode is designed and simulated aiming a simple and low cost fabrication process. It is limited to use not implantation process and to use a deep diffusion. The main parameters to fabricate this structure were studied using SRH and Auger recombination models for the lifetime, Crowell model for impact and high injection current considerations to lifetime. The lifetime reduction was performed by adjusting the parameters of capture cross section and density and Energy-level position of platinum. A breakdown voltage of more than 600 V and reverse recovery times less than 35 ns were obtained for a p+nn+ structure, with an epilayer of 50 μm thickness and doping of 2 to 3 × 10 14 cm -3. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.3615175
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84856911066&partnerID=40&md5=4d0c58c9b58673a4892fa122d3f9260a
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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