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Type: Artigo de periódico
Title: Sketched Oxide Single-electron Transistor
Author: Cheng G.
Siles P.F.
Bi F.
Cen C.
Bogorin D.F.
Bark C.W.
Folkman C.M.
Park J.-W.
Eom C.-B.
Medeiros-Ribeiro G.
Levy J.
Abstract: Devices that confine and process single electrons represent an important scaling limit of electronics1,2. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties3-5. Here, we use an atomic force microscope tip to reversibly 'sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides6-8. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.
Rights: fechado
Identifier DOI: 10.1038/nnano.2011.56
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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