Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107428
Type: Artigo de periódico
Title: Evolution Of The Er Environment In A-si:h Under Annealing: Ion Implantation Versus Co-deposition
Author: Tessler L.R.
Piamonteze C.
Alves M.C.M.
Tolentino H.
Abstract: The evolution of the chemical environment of Er in hydrogenated amorphous silicon (a-Si:H) prepared by cosputtering and by ion implantation under cumulative annealing steps was studied by extended X-ray absorption fine structure (EXAFS) at the Er LIII-edge. Samples were prepared by rf-sputtering. In one sample small chunks of metallic Er were attached to the Si target during deposition, resulting in an Er concentration [Er]/[Si] ∼ 0.2 at.%. In the other sample a similar Er concentration was ion-implanted. Annealing was performed in 20 min steps between 215 and 1100°C. In the as-co-sputtered sample (which had 7.6 at.% [O]/[Si] intentionally added to improve the Er3+ luminescence) the Er environment consists of a 3-fold co-ordinated oxygen shell. It smoothly evolves towards an Er2O3-like 6-fold co-ordinated shell. In the as-implanted sample the Er environment consists of a 10-fold co-ordinated Si shell. By annealing to 450°C the Er neighborhood evolved towards a smaller coordination. Above this temperature the Er coordination increased, indicating the formation of ErSix domains around the Er atoms. Only at 750°C the Er coordination starts to decrease, due to the onset of oxidation. The Er oxidation is completed between 850 and 1100°C. © 2000 Elsevier Science B.V. All rights reserved.
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0003051842&partnerID=40&md5=aaf471821ec103373be36f55c2ca18eb
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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