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|Type:||Artigo de periódico|
|Title:||Temperature Dependence Of The Photoconductivity Of Gallium-doped Hydrogenated Amorphous Germanium Films|
|Abstract:||This work reports a study of the photoconductivity (PC) of Ga-doped a-Ge:H films as a function of temperature and photon flux. The experimental data discussed here refer to: (a) the photocurrent, IPC, at fixed photon energy (1.3 eV) and fixed photon flux (F ≈ 2.4 × 1016 cm-2 s-1) in the 14-380 K temperature range and (b) the variation of the exponent, γ(IPC ∝ F with temperature (55-380 K) and doping level for F in the 8 × 1014-3 × 1016 cm-2 s-1 range. In all cases, IPC is approximately independent of temperature, T, in the low temperature region (T < 40 K) and increases for T > 40 K. The IPC of the undoped and the most lightly doped samples increases up to a maximum at T ∼ 230 K, and decreases for higher temperatures (thermal quenching, TQ). The maximum peak of IPC becomes smaller and appears as a shoulder as the doping level increases. However, this shoulder can still be interpreted as an evidence of TQ. The onset temperature of the TQ becomes smaller as the Ga concentration increases. A γmin corresponding to a Tmin is measured. Both γmin and Tmin vary with doping. The γmin and Tmin are maxima for compensated samples and decrease as the Fermi energy shifts from midgap in either direction. © 2000 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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