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|Type:||Artigo de periódico|
|Title:||Local Coordination And Electronic Doping Of Column Iii Metals In Hydrogenated Amorphous Germanium|
|Abstract:||The relationship between the local coordination, NGa and NIn, of gallium and indium atoms in a-Ge:H, as a function of the impurity content ([Ga], [In]) and the transport and structural properties of the films, is discussed. Extended X-ray absorption fine structure (EXAFS) data indicate that for [Ga], [In] ≤ 1.5 × 1018 cm-3 (where the symbol [ ] indicates concentration), the impurity atoms are always fourfold coordinated. As [Ga], [In] increase, N decreases from 4 to <3, the change of TGa being different from that of NIn. The Ga-Ge first shell distance in a-Ge:H films is always larger than in Ga doped c-Ge, yet it decreases with increasing [Ga]. The change from fourfold to threefold Ga and In coordination is attributed to the relaxation of compressive stress added by Ga and In to the a-Ge:H network. The static disorder around the impurities (from EXAFS) decreases with increasing doping © 2000 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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