Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107337
Type: Artigo de periódico
Title: Modification Of The Refractive Index And The Dielectric Constant Of Silicon Dioxide By Means Of Ion Implantation
Author: Swart J.W.
Diniz J.A.
Doi I.
De Moraes M.A.B.
Abstract: The modification of silicon dioxide films by means of ion implantation of fluorine and carbon was studied, 19F+ and 12C+ ions were separately and sequentially implanted in 250 nm thick thermal SiO2 films with energies ranging from 10 to 50 keV and fluences in the interval 5×1015 to 5×1016 cm-2. Metal/oxide/semiconductor (MOS) capacitors were fabricated on half side of the wafers. The implanted SiO2/Si samples were characterized by means of ellipsometry and Fourier transform infrared (FTIR) spectroscopy. The MOS capacitors were used to determine the relative dielectric constant. Our results indicate a considerable reduction of the dielectric constant and refractive index. The refractive index was reduced from 1.46 to 1.29 when only fluorine was implanted or when fluorine with a higher dose was implanted in combination with carbon. For the same conditions, a relative dielectric constant of 3.4 was obtained and a shift in the Si-O bond stretching mode from 1085 to 1075 cm-1 was observed by FTIR spectroscopy.
Editor: Elsevier Science Publishers B.V., Amsterdam, Netherlands
Rights: fechado
Identifier DOI: 10.1016/S0168-583X(99)00650-3
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033729342&partnerID=40&md5=028e70a37a4979b2a67c1c4f4532115a
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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