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|Type:||Artigo de periódico|
|Title:||Modification Of The Refractive Index And The Dielectric Constant Of Silicon Dioxide By Means Of Ion Implantation|
De Moraes M.A.B.
|Abstract:||The modification of silicon dioxide films by means of ion implantation of fluorine and carbon was studied, 19F+ and 12C+ ions were separately and sequentially implanted in 250 nm thick thermal SiO2 films with energies ranging from 10 to 50 keV and fluences in the interval 5×1015 to 5×1016 cm-2. Metal/oxide/semiconductor (MOS) capacitors were fabricated on half side of the wafers. The implanted SiO2/Si samples were characterized by means of ellipsometry and Fourier transform infrared (FTIR) spectroscopy. The MOS capacitors were used to determine the relative dielectric constant. Our results indicate a considerable reduction of the dielectric constant and refractive index. The refractive index was reduced from 1.46 to 1.29 when only fluorine was implanted or when fluorine with a higher dose was implanted in combination with carbon. For the same conditions, a relative dielectric constant of 3.4 was obtained and a shift in the Si-O bond stretching mode from 1085 to 1075 cm-1 was observed by FTIR spectroscopy.|
|Editor:||Elsevier Science Publishers B.V., Amsterdam, Netherlands|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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