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Type: Artigo de periódico
Title: Magnetic Field Dependence Of The Metal-insulator Transition In Ga[al]as-heterostructures
Author: Jaggi R.D.
Von Waldkirch M.
Heinzel T.
Ribeiro E.
Ensslin K.
Medeiros-Ribeiro G.
Petroff P.M.
Abstract: A metal-insulator transition at zero magnetic field is observed in Ga[Al]As-heterostructures where a high density of self-assembled InAs-quantum dots is located in the region of the two-dimensional electron gas (2DEG). This transition occurs only in samples with high dot densities. In contrast to other two-dimensional systems showing a metallic phase the Coulomb energy is comparable to the kinetic energy in our systems. Measurements in perpendicular fields reveal that the resistivity at B = 0 is composed of several contributions. In the metallic regime a weak localization peak is superposed on top of a broad negative magnetoresistivity. In the insulating regime, the weak localization peak at B = 0 develops into a very pronounced negative magnetoresistivity with decreasing electron density. Pronounced, almost B-periodic oscillations in the magnetoresistivity are observed in addition to universal conductance fluctuations.
Editor: Elsevier Sci B.V., Amsterdam, Netherlands
Rights: fechado
Identifier DOI: 10.1016/S1386-9477(99)00141-1
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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