Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Diamond Coating Of Porous Silicon|
|Abstract:||Diamond coatings on porous silicon (PS) samples have been obtained by the hot-filament chemical vapor deposition (CVD) technique. We focused our attention on the coating morphology, showing experimentally that high quality diamond coatings may be produced with the PS sample kept at 710 °C. The deposited patterns consist of polycrystalline grains with a plane interface with the PS layer. At 790 °C, the quality of the coating is improved but the PS layer becomes damaged, and at 650 °C the coating consists of diamond-like carbon particles. Besides the temperature, other factors such as the porosity, roughness and chemical activity of the PS layer deserve attention. We observed that one of the limiting factors of the deposition process was the high nucleation time. Two nucleation mechanisms are involved in the growth process. The first nucleation mechanism occurs on the top of the sharp PS features, subsequently to the nucleation a superficial film, and then a second nucleation mechanism occurs over this surface, which allows the growth process to continue. We also observed the presence of a blue-shift in the luminescence spectra following coating.|
|Editor:||Kluwer Academic Publishers, Dordrecht, Netherlands|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.