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Type: Artigo de periódico
Title: Dislocation Core Reconstruction In Zinc-blende Semiconductors
Author: Justo J.F.
Fazzio A.
Antonelli A.
Abstract: Using ab initio total-energy calculations, we computed core reconstruction energies of partial dislocations in zinc-blende semiconductors. The reconstruction energy of 30° partials was found to scale almost linearly with the experimental activation energy of 60° dislocations. The electronic structure of a dislocation shows that in an unreconstructed core, the gap states comprise a half-filled one-dimensional band, which splits up into bonding and antibonding states upon reconstruction. The energy states which lie in the electronic gap come from the core of β-partials, while those related to α-partials remain resonant in the valence band.
Editor: IOP, Bristol, United Kingdom
Rights: fechado
Identifier DOI: 10.1088/0953-8984/12/49/303
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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