Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/107125
Type: Artigo de periódico
Title: On The Optimization Of Ingaas-inalas Quantum-well Structures For Electroabsorption Modulators
Author: Pires M.P.
De Souza P.L.
Yavich B.
Pereira R.G.
Carvalho Jr. W.
Abstract: Several InGaAs-InAlAs multiple quantum-well structures grown by metalorganic vapor phase epitaxy (MOVPE), with various Ga content and quantum-well width, have been investigated for electroabsorption modulators (EAM's). The light-hole heavy-hole splitting, the chirp parameter, the insertion loss and the figure of merit ΓΔα/F of the different InGaAs-InAlAs structures have been evaluated with photocurrent, photoluminescence, absorption and X-ray measurements. It was then possible to experimentally study the influence of different parameters of the multiple quantum-well structures on the device performance. The use of tensile strained barriers are believed to be responsible for the improvement in the figure of merit. Structures with unresolved light-hole and heavy-hole transitions, with negligible chirp, with adequate insertion loss and with extremely high values for ΓΔα/F have been obtained, however, not simultaneously.
Editor: 
Rights: fechado
Identifier DOI: 10.1109/50.838135
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0033735032&partnerID=40&md5=5c5d28b3f1dfdccbfc1838f8ec19c630
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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