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|Type:||Artigo de periódico|
|Title:||Effects Of Thermally Activated Hole Escape Mechanism On The Optical And Electrical Properties In P-type Si δ-doped Gaas(311)a Layers|
Da Silva E.C.F.
|Abstract:||A series of periodically spaced p-type δ-doped GaAs(311)A layers, with a doping period varying from 100 to 500 Å, was investigated by Hall effect and photoluminescence measurements in the range of 2 up to 280 K. An enhancement of the Hall mobility by a factor of 5 was observed around 100 K for the structure with the largest period with respect to the one with the smallest period. Photoluminescence measurements carried out at different temperatures revealed that the physical origin of the mobility enhancement was related to the escape of confined holes from the two-dimensional hole gas to the undoped GaAs region between δ-doped layers. Both optical and transport data provided strong evidence of the two-dimensional to three-dimensional transition related to the change from isolated δ wells to a superlattice of δ wells characterized by the formation of minibands. ©2000 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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