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|Type:||Artigo de periódico|
|Title:||Effects Of Hydrostatic Pressure And Aluminum Concentration On The Conduction-electron G Factor In Gaas-(ga,al)as Quantum Wells Under In-plane Magnetic Fields|
|Abstract:||The effects of hydrostatic pressure and aluminum concentration on the conduction-electron effective Landé g factor in semiconductor GaAs- Ga1-x Alx As quantum wells under in-plane magnetic fields are presented. Numerical calculations of the conduction-electron Landé g factor are performed by taking into account the nonparabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian as well as the effects of aluminum concentration and applied hydrostatic pressure. Theoretical results are given as functions of the aluminum concentration in the Ga1-x Alx As barrier, orbit-center position, applied in-plane magnetic field, hydrostatic pressure, and quantum-well width, and found in good agreement with experimental measurements in GaAs- Ga1-x Alx As quantum wells for various values of the aluminum concentration x in the absence of hydrostatic pressure. © 2008 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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