Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/106796
Type: Artigo de periódico
Title: Effects Of Hydrostatic Pressure And Aluminum Concentration On The Conduction-electron G Factor In Gaas-(ga,al)as Quantum Wells Under In-plane Magnetic Fields
Author: Reyes-Gomez E.
Raigoza N.
Oliveira L.E.
Abstract: The effects of hydrostatic pressure and aluminum concentration on the conduction-electron effective Landé g factor in semiconductor GaAs- Ga1-x Alx As quantum wells under in-plane magnetic fields are presented. Numerical calculations of the conduction-electron Landé g factor are performed by taking into account the nonparabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian as well as the effects of aluminum concentration and applied hydrostatic pressure. Theoretical results are given as functions of the aluminum concentration in the Ga1-x Alx As barrier, orbit-center position, applied in-plane magnetic field, hydrostatic pressure, and quantum-well width, and found in good agreement with experimental measurements in GaAs- Ga1-x Alx As quantum wells for various values of the aluminum concentration x in the absence of hydrostatic pressure. © 2008 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.77.115308
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-41449116618&partnerID=40&md5=db2918e0123c62ed449b1ad96548f9c6
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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