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|Type:||Artigo de periódico|
|Title:||Role Of X Valley On The Dynamics Of Electron Transport Through A Gaas/alas Double-barrier Structure|
De Carvalho H.B.
Galvao Gobato Y.
|Abstract:||The transport of electrons through a GaAs/AlAs double-barrier structure with p -type doped contacts was investigated using time-resolved photoluminescence spectroscopy. Under illumination, the current-voltage characteristics of the device present two additional features attributed, respectively, to resonant Γ-Γ and Γ-X electron tunneling. Optical measurements for biases where these two alternative transport mechanisms have competitive probabilities revealed an unusual carrier dynamics. The quantum well emission is strongly delayed and we observe a remarkable nonlinear effect where the emission intensity decreases at the arrival of a laser pulse. We propose a simple model that adequately describes our results where we assume that the indirect-transition rate depends on the density of electrons accumulated along the structure. © 2008 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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