Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/106785
Type: Artigo de periódico
Title: Role Of X Valley On The Dynamics Of Electron Transport Through A Gaas/alas Double-barrier Structure
Author: Galeti H.V.A.
De Carvalho H.B.
Brasil M.J.S.P.
Galvao Gobato Y.
Lopez-Richard V.
Marques G.E.
Henini M.
Hill G.
Abstract: The transport of electrons through a GaAs/AlAs double-barrier structure with p -type doped contacts was investigated using time-resolved photoluminescence spectroscopy. Under illumination, the current-voltage characteristics of the device present two additional features attributed, respectively, to resonant Γ-Γ and Γ-X electron tunneling. Optical measurements for biases where these two alternative transport mechanisms have competitive probabilities revealed an unusual carrier dynamics. The quantum well emission is strongly delayed and we observe a remarkable nonlinear effect where the emission intensity decreases at the arrival of a laser pulse. We propose a simple model that adequately describes our results where we assume that the indirect-transition rate depends on the density of electrons accumulated along the structure. © 2008 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.78.165309
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-54449084189&partnerID=40&md5=63bb67e9ae790a4a4085c9bf343fef12
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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