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|Type:||Artigo de periódico|
|Title:||Effects Of Hydrostatic Pressure On The Electron Parallel Factor And G || Factor Anisotropy In Gaas-(ga, Al)as Antum Wells Under Magnetic Fields|
|Abstract:||The hydrostatic-pressure effects on the electron-effective Landé factor and g-factor anisotropy in semiconductor GaAs-Ga1-xAl xAs quantum wells under magnetic fields are studied. The factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures. © 2008 IOP Publishing Ltd.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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