Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/106696
Type: Artigo de periódico
Title: Effects Of Hydrostatic Pressure On The Electron Parallel Factor And G || Factor Anisotropy In Gaas-(ga, Al)as Antum Wells Under Magnetic Fields
Author: Porras-Montenegro N.
Duque C.A.
Reyes-Gomez E.
Oliveira L.E.
Abstract: The hydrostatic-pressure effects on the electron-effective Landé factor and g-factor anisotropy in semiconductor GaAs-Ga1-xAl xAs quantum wells under magnetic fields are studied. The factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures. © 2008 IOP Publishing Ltd.
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Rights: fechado
Identifier DOI: 10.1088/0953-8984/20/46/465220
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-58149357357&partnerID=40&md5=1cf5d5cfa7593764c9a338b18631275e
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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