Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105907
Type: Artigo de periódico
Title: Electron Landé G∥ Factor In Semiconductor Quantum Wires
Author: Lopez F.E.
Reyes-Gomez E.
Oliveira L.E.
Abstract: The properties of the conduction-electron g∥ factor in semiconductor GaAs-Ga1 - x Alx As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g∥ factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calculations are performed by taking into account the non-parabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian for both cylindrical and rectangular quantum-well wires. The conduction-electron Landé factor is shown to be a growing function of the applied magnetic field as well as dependent on the shape of the transversal section of the wire. © 2008 Elsevier Ltd. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.mejo.2008.01.030
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-54849431428&partnerID=40&md5=916840764b9764d7c241480e41a3a036
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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