Please use this identifier to cite or link to this item:
|Type:||Artigo de evento|
|Title:||High Q-factor Monolithic Inductor For Rf Devices Using Double Ground Shield|
|Author:||Lagoia Fonseca Jr. P.N.|
|Abstract:||This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors, patterned ground shield, double ground shielding using polysilicon inductors, and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This technique can be applied to any BiCMOS technology without any additional process. ©2008 IEEE.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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