Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105904
Type: Artigo de evento
Title: High Q-factor Monolithic Inductor For Rf Devices Using Double Ground Shield
Author: Lagoia Fonseca Jr. P.N.
Kretly L.C.
Abstract: This paper presents a technique to improve RF integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This method was compared with conventional inductors, patterned ground shield, double ground shielding using polysilicon inductors, and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This technique can be applied to any BiCMOS technology without any additional process. ©2008 IEEE.
Editor: 
Rights: fechado
Identifier DOI: 10.1109/ICCDCS.2008.4542670
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-51249117849&partnerID=40&md5=d1056475271728a2526a4d339ffd22d3
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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