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|Type:||Artigo de evento|
|Title:||Improving Q-factor Of Monolithic Inductor By Using Double Ground Shield - N+ Buried And Polysilicon - A Realistic Simulation|
|Author:||Lagoia Fonseca Jr. P.N.|
|Abstract:||This work presents a new alternative to improve integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This technique was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This method can be applied to any BiCMOS technology. ©2008 IEEE.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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