Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105843
Type: Artigo de evento
Title: Improving Q-factor Of Monolithic Inductor By Using Double Ground Shield - N+ Buried And Polysilicon - A Realistic Simulation
Author: Lagoia Fonseca Jr. P.N.
Kretly L.C.
Abstract: This work presents a new alternative to improve integrated inductor performance, incorporating double ground shield using polysilicon and n+ buried layer, providing a fully shield and preventing the electric field penetration. This technique was compared with conventional inductors and improves Q-factor up to 50% at 3.5, 4 and 5 GHz. The results were obtained based on AMS 0.35μm BiCMOS technology. This method can be applied to any BiCMOS technology. ©2008 IEEE.
Editor: 
Rights: fechado
Identifier DOI: 10.1109/CCE.2008.4578923
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-51649113449&partnerID=40&md5=2053987179d423d161a7df69b7ff9340
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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