Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105652
Type: Artigo de evento
Title: Platinum Thin Films Deposited On Silicon Oxide By Focused Ion Beam: Characterization And Application
Author: Vaz A.R.
Da Silva M.M.
Leon J.
Moshkalev S.A.
Swart J.W.
Abstract: Focused ion beam system was used for deposition of platinum (Pt) thin films on thermally oxidized silicon (Si). Various test patterns (squares and lines) were deposited for electrical characterization of the films, using 2- and 4-terminal measurements. Tests with parallel Pt lines were also carried out, and considerable leakage was detected for the interline distances in the sub-micron range. We investigated two ways to decrease the leakage current: inducing surfaces roughness and using an oxygen plasma after patterns deposition. A method of dielectrophoresis with an AC electric field was applied to align and deposit metallic multi-wall carbon nanotubes (CNT) between pre-fabricated metal, gold, and palladium electrodes with a micron-scale separation. Further, using focused electron and ion beam-deposited Pt contacts in two different configurations ("Pt-on-CNT" and "CNT-on-Pt"), 4-terminal measurements have been performed to evaluate intrinsic nanotube resistances. © 2008 Springer Science+Business Media, LLC.
Editor: 
Rights: fechado
Identifier DOI: 10.1007/s10853-007-2402-3
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-42149150608&partnerID=40&md5=57e32952d167514e810c051a824207a8
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File SizeFormat 
2-s2.0-42149150608.pdf261.96 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.