Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105583
Type: Artigo de evento
Title: Characteristics Of Titanium Oxide Gate Nmosfet Formed By E-beam Evaporation With Additional Rapid Thermal Oxidation And Annealing
Author: De Barros A.D.
Miyoshi J.
Wada R.
Cavarsan F.A.
Doi I.
Diniz J.A.
Abstract: High k insulators, such as titanium oxide (TiOx), have been obtained by Ti e-beam evaporation, using different thicknesses of 5nm, 10nm and 20nm with additional rapid thermal oxidation and annealing at temperature of 960°C for 40s. Characterization by Fourier transform infrared (FTIR) analyses reveals the Ti-O and Si-O bonds, which confirms titanium oxide formation. Raman spectroscopy identified that these films present rutile and anatase phases. These films have been used as gate insulators in nMOSFETs. These devices and MOS capacitors, with Al electrodes and final sintering at 450°C for 10min in forming gas, were fabricated. MOS capacitors were used to obtain capacitance-voltage (C-V) measurements, and to extract the Equivalent Oxide Thickness (EOT) from the films, resulting in values between 16.3nm and 19.7nm, and effective charge densities of about 1011cm-2. nMOSFET electrical characteristics, such as threshold voltages between 0.39V and 0.43V and sub-threshold slopes between 61mV/dec and 100mV/dec, were obtained. These results indicated that the obtained TiOx films are suitable gate insulators for MOS devices. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.2956047
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-57749172455&partnerID=40&md5=3f05e00ab3b24285c9d591e67f2b2277
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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