Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105352
Type: Artigo de periódico
Title: Heterostructure Interface Roughness Characterization By Chemical Mapping: Application To Ingap/gaas Quantum Wells
Author: Tizei L.H.G.
Bettini J.
Carvalho M.M.G.
Ugarte D.
Abstract: Interface quality is an important factor for the functionality of semiconductor modern devices. Routinely, these characteristics are probed qualitatively by photoluminescence. However, quantitative microscopic structural information to corroborate models is not commonly available. Among different techniques, atomic resolution transmission electron microscopy images represent the basic experimental method to analyze the quality of buried interfaces. In this work we describe the analysis of chemical changes determined from the quantitative comparison of intensity distribution across an interface in high resolution transmission electronic microscopy (HRTEM) images. We have shown that a careful analysis of HRTEM images contrast can provide extremely useful quantitative information on interface roughness. We have characterized four different samples of InGaP/GaAs quantum wells grown with different interfacial schemes. Limits in the quantification from different sources, such as sample preparation, sampling, and statistics, have been thoroughly analyzed. © 2008 American Institute of Physics.
Editor: 
Rights: aberto
Identifier DOI: 10.1063/1.2990064
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-54049141295&partnerID=40&md5=5fe2ff8808b18b16d953cdc45f62734c
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.