Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105252
Type: Artigo de evento
Title: Ecr-cvd Sinx Passivation In Gaas-based Misfet Devices
Author: Zoccal L.B.
Diniz J.A.
Fo J.G.
Daltrini A.
Swart J.W.
Abstract: We have developed an excellent quality passivation silicon nitride on GaAs that requires no surface pre-treatment. The silicon nitride film is deposited (by Electron Cyclotron Resonance (ECR) - Chemical Vapor Deposition (CVD)) directly over GaAs-n (implanted with Si ions) layer formed in semi-insulating GaAs substrates, which are used for Metal-Insulator-Semiconductor Field Effect Transistor (MISFET). Optical emission spectrometry (OES) was used for ECR-CVD plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2 mTorr. The ECR depositions were carried out at a fixed substrate temperature of 20°C, SiH4/N2 flow ratio of 1, Ar flow of 5 seem, pressure of 2 mTorr and microwave (2.45 GHz) power of 250W. We have applied this nitride to our GaAs MISFET fabrication process with excellent results, such as higher transconductances of MISFET devices in related to MESFETs (Metal-Semiconductor FETs), which were used as control devices. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.2766885
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-45249089002&partnerID=40&md5=33f942116a8963b01948222ca0b0679c
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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