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Type: Artigo de evento
Title: 10 Ghz Rf Passive Components Obtained By Mcm-d Technology
Author: Zoccal L.B.
Cabreira C.M.
Yamamoto S.D.
Flacker R.A.
Gomes E.A.
Diniz J.A.
Swart J.W.
Abstract: Thin film multi layer MCM-D (Multi Chip Module Substrate) technology was developed for application on RF (radio-frequency) circuits aiming passive components (capacitors and inductors) and transmission line patterns integration. Metallic layers, using gold and nickel-phosphorus, and dielectric (non-conductive) layers, using Benzocyclobutene (BCB) resin and silicon nitride, were deposited on alumina substrate to manufacture MCM-D structure. Semiconductor integrated circuit (IC) manufacturing techniques were adapted and employed to get high quality and accurate passive components and circuits. Modeling of passive components and transmission lines patterns used electromagnetic simulation tools. RF (up to 10GHz) on-wafer measurements were done on manufactured structures and shown good agreement with simulation results demonstrating that it is applicable on RF devices and modules covering many wireless applications as GSM, BlueTooth and HyperLAN. Focused Ion Beam (FIB) was used for structure analysis and layer thickness measurements. © The Electrochemical Society.
Rights: fechado
Identifier DOI: 10.1149/1.2766912
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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