Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/105250
Type: Artigo de evento
Title: Gaas And Algaas Reactive Ion Etching In Sicl4/ar Gas Mixtures For Hemt Applications
Author: Nunes A.M.
Moshkalev S.A.
Tatsch P.J.
Duarte C.A.
Gusev G.M.
Abstract: This work presents the AlGaAs and GaAs etching results using a RIE reactor and SiCl4/Ar plasma. These materials can be applied in HEMT devices fabrication. The influence of the process temperature on etch rates has been studied. Selectivity of etching and the importance of the periodical process chamber cleaning for SiCl4 containing gas mixtures are discussed. For optimized conditions, GaAs etch rate as high as ∼50nm/min with low surface roughness, for process duration as long as 60 min, have been obtained. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.2766886
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-45249089206&partnerID=40&md5=43b56aca96feaede9f9eeb1ce8001055
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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